VBsemi Electronics Co. Ltd. Transistors P2610BT-VB

Description
100V 70A 18.3mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
Request a Quote
Description
100V 70A 18.3mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - P2610BT-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
P2610BT-VB
Transistors P2610BT-VB
100V 70A 18.3mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

100V 70A 18.3mΩ@10V,30A 355W 4V@250uA 1 N-Channel TO-220AB-3 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number P2610BT-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA PNP general-purpose transistors - BC807-40/A2,215 - Nexperia B.V.
Specs
Transistor Type BJT
Polarity NPN
Package Type

-

View Details
IGBT - 119969632 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details