VBsemi Electronics Co. Ltd. Transistors NTD4806NT4G-VB

Description
30V 100A 2mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - NTD4806NT4G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 100A 2mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - NTD4806NT4G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NTD4806NT4G-VB
Transistors NTD4806NT4G-VB
30V 100A 2mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

30V 100A 2mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NTD4806NT4G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Dual, Module, 100A, 1200V, Npt; Continuous Collector Current Fuji Electric - 56P5421 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Dual, Module, 100A, 1200V, Npt; Continuous Collector Current Fuji Electric
2MBI100S-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
2 suppliers
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD212900SAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR
ALD212900SAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details
MOSFETs - 1464729 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1464729
Specs
Transistor Type MOSFET
Polarity P-Channel
Package Type Di5060
View Details