VBsemi Electronics Co. Ltd. Transistors NTD12N10G-VB

Description
100V 15A 114mΩ@10V,15A 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - NTD12N10G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 15A 114mΩ@10V,15A 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NTD12N10G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NTD12N10G-VB
Transistors NTD12N10G-VB
100V 15A 114mΩ@10V,15A 1 N-Channel TO-252 MOSFETs ROHS

100V 15A 114mΩ@10V,15A 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NTD12N10G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

80 V, 1 A PNP medium power transistors - BC53-16PAST-QX - Nexperia B.V.
Nexperia B.V.
80 V, 1 A PNP medium power transistors
BC53-16PAST-QX
Specs
Polarity NPN
Package Type DFN2020D-3 (SOT1061D)
View Details
2 suppliers
IGBT - 49442981 - Radwell International
Fuji Electric Corp. of America
IGBT
6MBP100RA06002
Specs
Transistor Type IGBT
View Details
PNP RF Transistor - MPSH81 - Micross Components, Inc.
Micross Components, Inc.
PNP RF Transistor
MPSH81
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details