VBsemi Electronics Co. Ltd. Transistors NCE40P05Y-VB

Description
30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
Request a Quote
Description
30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE40P05Y-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE40P05Y-VB
Transistors NCE40P05Y-VB
30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS

30V 5.6A 46mΩ@10V,4.4A 2.5W 2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE40P05Y-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 14 GHz, 50 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-10 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
4 suppliers
Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
View Details
IGBT - 212891025 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1627-T-AZ - 855053-2SA1627-T-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details