VBsemi Electronics Co. Ltd. Transistors NCE30H10K-VB

Description
30V 100A 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - NCE30H10K-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
30V 100A 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - NCE30H10K-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE30H10K-VB
Transistors NCE30H10K-VB
30V 100A 1 N-Channel TO-252 MOSFETs ROHS

30V 100A 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE30H10K-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Bipolar Transistor
2SK2522-01
Specs
Transistor Type Bipolar RF
View Details
60 V, 300 mA N-channel Trench MOSFET - 2N7002/HAMR - Nexperia B.V.
Nexperia B.V.
60 V, 300 mA N-channel Trench MOSFET
2N7002/HAMR
Specs
Transistor Type MOSFET
Package Type SOT23; SOT23 SOT23
View Details
9 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
500A Igbt Mod Left-Side & Right-Side - SK-H1-QOUT-D500 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
500A Igbt Mod Left-Side & Right-Side
SK-H1-QOUT-D500
Specs
Transistor Type IGBT
View Details