VBsemi Electronics Co. Ltd. Transistors NCE30H10-VB

Description
30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
  • Transistors - NCE30H10-VB - ODG (Origin Data Global)
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Description
30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS
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Transistors - NCE30H10-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
NCE30H10-VB
Transistors NCE30H10-VB
30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS

30V 98A 35mΩ@10V,28.8A 250W 2.5V@250uA 1 N-Channel TO-220 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number NCE30H10-VB
Product Name Transistors
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