VBsemi Electronics Co. Ltd. Transistors MTD6P10ET4-VB

Description
100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS
  • Transistors - MTD6P10ET4-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Transistors - MTD6P10ET4-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MTD6P10ET4-VB
Transistors MTD6P10ET4-VB
100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

100V 8.8A 250mΩ@10V,3.6A 32.1W 2.5V@250uA 1 Piece P-Channel TO-252-2 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MTD6P10ET4-VB
Product Name Transistors
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