VBsemi Electronics Co. Ltd. Transistors MTD2955ET4G-VB

Description
60V 30A 61mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - MTD2955ET4G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
60V 30A 61mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - MTD2955ET4G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
MTD2955ET4G-VB
Transistors MTD2955ET4G-VB
60V 30A 61mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

60V 30A 61mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number MTD2955ET4G-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs - - Win Source Electronics
Qorvo
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
UJ3C065030T3S
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3
View Details
4 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H - AIMBG75R020M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG75R020M1H
AIMBG75R020M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA
2SA1319S-AA
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details