VBsemi Electronics Co. Ltd. Transistors ME8107-VB

Description
30V 13.5A 11mΩ@10V,13.5A 1 Piece P-Channel SOP-8 MOSFETs ROHS
  • Transistors - ME8107-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
30V 13.5A 11mΩ@10V,13.5A 1 Piece P-Channel SOP-8 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - ME8107-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
ME8107-VB
Transistors ME8107-VB
30V 13.5A 11mΩ@10V,13.5A 1 Piece P-Channel SOP-8 MOSFETs ROHS

30V 13.5A 11mΩ@10V,13.5A 1 Piece P-Channel SOP-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number ME8107-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, 6 Pack Module 1200V, 10A, M623; Continuous Collector Current Fuji Electric - 76R7105 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, 6 Pack Module 1200V, 10A, M623; Continuous Collector Current Fuji Electric
6MBI10S-120-50
Specs
Transistor Type IGBT
Package Type TO-3
View Details
RS Components, Ltd.
Bipolar Transistors
1708891
Specs
Transistor Type BJT
Polarity NPN
Package Type DFN0806
View Details
502A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E502 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
502A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E502
Specs
Transistor Type IGBT
View Details
Single FETs, MOSFETs - 448-AIMDQ75R004M2HXTMA1DKR-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AIMDQ75R004M2HXTMA1
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type 22-PowerBSOP Module
View Details