VBsemi Electronics Co. Ltd. Transistors IRF7341QTRPBF-VB

Description
60V 7A 40mΩ@10V,7A 2 N-Channel SOIC-8 MOSFETs ROHS
  • Transistors - IRF7341QTRPBF-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 7A 40mΩ@10V,7A 2 N-Channel SOIC-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - IRF7341QTRPBF-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IRF7341QTRPBF-VB
Transistors IRF7341QTRPBF-VB
60V 7A 40mΩ@10V,7A 2 N-Channel SOIC-8 MOSFETs ROHS

60V 7A 40mΩ@10V,7A 2 N-Channel SOIC-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IRF7341QTRPBF-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1658845 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1658845
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Sot-363 (sc-88)
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA - 855027-2SA1319S-AA - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1319S-AA
2SA1319S-AA
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
IGBT - 101806678 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI300U2K-120-01
Specs
Transistor Type IGBT
View Details
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT - TGF2956 - Qorvo
Qorvo
DC - 12 GHz, 55 Watt Discrete Power GaN on SiC HEMT
TGF2956
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details