VBsemi Electronics Co. Ltd. Transistors IRF520NS-VB

Description
100V 20A 100mΩ@10V,20A 1 N-Channel TO-263-2 MOSFETs ROHS
  • Transistors - IRF520NS-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 20A 100mΩ@10V,20A 1 N-Channel TO-263-2 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - IRF520NS-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IRF520NS-VB
Transistors IRF520NS-VB
100V 20A 100mΩ@10V,20A 1 N-Channel TO-263-2 MOSFETs ROHS

100V 20A 100mΩ@10V,20A 1 N-Channel TO-263-2 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IRF520NS-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Bipolar Transistor
2SK2252-01S-TE24R
Specs
Transistor Type Bipolar RF
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-16W-QX - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-16W-QX
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
3 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R020M1T - AIMZH120R020M1T - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMZH120R020M1T
AIMZH120R020M1T
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details