VBsemi Electronics Co. Ltd. Transistors IRF1010NPBF-VB

Description
60V 60A 11mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS
  • Transistors - IRF1010NPBF-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 60A 11mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - IRF1010NPBF-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IRF1010NPBF-VB
Transistors IRF1010NPBF-VB
60V 60A 11mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS

60V 60A 11mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IRF1010NPBF-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Fuji Electric Corp. of America
Bipolar Transistor
2SK3674-01S-TE24R
Specs
Transistor Type Bipolar RF
View Details
Bipolar Transistor, Npn, 45V, 500Ma, 3-Sot-23, Full Reel; Transistor Polarity Nexperia - 27AC0840 - Newark, An Avnet Company
Nexperia B.V.
Bipolar Transistor, Npn, 45V, 500Ma, 3-Sot-23, Full Reel; Transistor Polarity Nexperia
BC817-25,235.
Specs
Transistor Type Bipolar RF; Bipolar Transistor, Npn, 45V, 500Ma, 3-Sot-23, Full Reel; Transistor Polarity Nexperia
Polarity NPN
Package Type TO-3; SOT23
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H - AIMDQ75R090M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R090M1H
AIMDQ75R090M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
920A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E920
Specs
Transistor Type IGBT
View Details