VBsemi Electronics Co. Ltd. Transistors IPD110N12N3G-VB

Description
100V 18A 115mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - IPD110N12N3G-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 18A 115mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

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Transistors - IPD110N12N3G-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPD110N12N3G-VB
Transistors IPD110N12N3G-VB
100V 18A 115mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

100V 18A 115mΩ@10V 1 N-Channel TO-252 MOSFETs ROHS

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Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPD110N12N3G-VB
Product Name Transistors
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