VBsemi Electronics Co. Ltd. Transistors IPB110P06LMATMA1-VB

Description
TO-263 MOSFETs ROHS
  • Transistors - IPB110P06LMATMA1-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
TO-263 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - IPB110P06LMATMA1-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
IPB110P06LMATMA1-VB
Transistors IPB110P06LMATMA1-VB
TO-263 MOSFETs ROHS

TO-263 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number IPB110P06LMATMA1-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

45 V, 500 mA NPN general-purpose transistors - BC817-25W/MIX - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-25W/MIX
Specs
Transistor Type BJT
Package Type SC-70
View Details
3 suppliers
590A IGBT MODULE FOR ONE PHASE 600/690V - SK-H1-QOUT-E590 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
590A IGBT MODULE FOR ONE PHASE 600/690V
SK-H1-QOUT-E590
Specs
Transistor Type IGBT
View Details
AMP, TRANSIMP, 11.3GBPS, RSSI, TO46 - More Details - 815-ONET8541TY - Utmel Electronic Limited
Texas Instruments
AMP, TRANSIMP, 11.3GBPS, RSSI, TO46 - More Details
ONET8541TY
View Details
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die - QPD2160D - Qorvo
Qorvo
DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
QPD2160D
Specs
Transistor Type HEMT; PHEMT
Transistor Technology / Material DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
Package Type Die
View Details
2 suppliers