VBsemi Electronics Co. Ltd. Transistors HY3410P-VB

Description
100V 100A 9mΩ@10V 1 N-Channel TO-220AB MOSFETs ROHS
  • Transistors - HY3410P-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 100A 9mΩ@10V 1 N-Channel TO-220AB MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HY3410P-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HY3410P-VB
Transistors HY3410P-VB
100V 100A 9mΩ@10V 1 N-Channel TO-220AB MOSFETs ROHS

100V 100A 9mΩ@10V 1 N-Channel TO-220AB MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HY3410P-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 443998 - Radwell International
Fuji Electric Corp. of America
Transistor
2DI150Z-120
View Details
PNP/PNP general purpose double transistor - BC807DSF - Nexperia B.V.
Nexperia B.V.
PNP/PNP general purpose double transistor
BC807DSF
Specs
Package Type SOT457 SOT457
View Details
5 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1180A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1180A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E1K1
Specs
Transistor Type IGBT
View Details