VBsemi Electronics Co. Ltd. Transistors HAT1126R-VB

Description
60V 5.3A 59mΩ@10V,5.3A 2 P-Channel SO-8 MOSFETs ROHS
  • Transistors - HAT1126R-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 5.3A 59mΩ@10V,5.3A 2 P-Channel SO-8 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - HAT1126R-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
HAT1126R-VB
Transistors HAT1126R-VB
60V 5.3A 59mΩ@10V,5.3A 2 P-Channel SO-8 MOSFETs ROHS

60V 5.3A 59mΩ@10V,5.3A 2 P-Channel SO-8 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number HAT1126R-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Bipolar Transistors - 1219489 - RS Components, Ltd.
RS Components, Ltd.
Bipolar Transistors
1219489
Specs
Transistor Type BJT
Polarity NPN
Package Type SOT23; Sot-23
View Details
80 V, 1 A NPN medium power transistors - BC56-10PAS-QX - Nexperia B.V.
Nexperia B.V.
80 V, 1 A NPN medium power transistors
BC56-10PAS-QX
Specs
Package Type SOT1061D SOT1061D
View Details
2 suppliers
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor - T1G4020036-FL - Qorvo
Qorvo
DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
T1G4020036-FL
Specs
Transistor Technology / Material DC - 3.5 GHz, 2 x 200 Watt, 50 Volt GaN RF Power Transistor
Package Type NI-650 Flanged
View Details
2 suppliers
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY - ALD111933PAL - Advanced Linear Devices, Inc.
Advanced Linear Devices, Inc.
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY
ALD111933PAL
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
3 suppliers