VBsemi Electronics Co. Ltd. Transistors H10N65F-VB

Description
650V 10A 820mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS
  • Transistors - H10N65F-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
650V 10A 820mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - H10N65F-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
H10N65F-VB
Transistors H10N65F-VB
650V 10A 820mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

650V 10A 820mΩ@10V 1 N-Channel TO-220F MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number H10N65F-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Transistor - 443998 - Radwell International
Fuji Electric Corp. of America
Transistor
2DI150Z-120
View Details
45 V, 500 mA NPN general-purpose transistors - BC817-40,215 - Nexperia B.V.
Nexperia B.V.
45 V, 500 mA NPN general-purpose transistors
BC817-40,215
Specs
Transistor Type BJT
Package Type SOT23; SOT23 SOT23
View Details
7 suppliers
- 2EDN7524FXTMA1 - Rochester Electronics
Infineon Technologies AG
2EDN7524FXTMA1
Specs
Transistor Type MOSFET
Package Type SO-8; PG-DSO-8
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1150A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K1
Specs
Transistor Type IGBT
View Details