VBsemi Electronics Co. Ltd. Transistors FQD4N50-VB

Description
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - FQD4N50-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FQD4N50-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
FQD4N50-VB
Transistors FQD4N50-VB
650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS

650V 4.5A 1.8Ω@10V,4.5A 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FQD4N50-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

60 V, 300 mA N-channel Trench MOSFET - 2N7002,215 - Nexperia B.V.
Nexperia B.V.
60 V, 300 mA N-channel Trench MOSFET
2N7002,215
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT23; SOT23
View Details
8 suppliers
IGBT Module - 45337911 - Radwell International
Fuji Electric Corp. of America
IGBT Module
7MBR30U2A06050
Specs
Transistor Type IGBT
View Details
General Purpose Transistor - 2N3904 - Micross Components, Inc.
Micross Components, Inc.
General Purpose Transistor
2N3904
View Details
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details