VBsemi Electronics Co. Ltd. Transistors FDP61N20-VB

Description
200V 80A 17mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS
Request a Quote
Description
200V 80A 17mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - FDP61N20-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
FDP61N20-VB
Transistors FDP61N20-VB
200V 80A 17mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS

200V 80A 17mΩ@10V 1 N-Channel TO-220 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number FDP61N20-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

 - EMB1412MYE/NOPB - Rochester Electronics
Texas Instruments
Specs
Transistor Type MOSFET
Package Type HVSSOP8
View Details
IGBT Module - 158777848 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1317T - 855026-2SA1317T - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Dual N-Channel Matched MOSFET Pair - ALD1101BSAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
3 suppliers