VBsemi Electronics Co. Ltd. Transistors DMN601K-7-VB

Description
60V 250mA 2.8Ω@10V 1 N-Channel SOT-23 MOSFETs ROHS
  • Transistors - DMN601K-7-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 250mA 2.8Ω@10V 1 N-Channel SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - DMN601K-7-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
DMN601K-7-VB
Transistors DMN601K-7-VB
60V 250mA 2.8Ω@10V 1 N-Channel SOT-23 MOSFETs ROHS

60V 250mA 2.8Ω@10V 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number DMN601K-7-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 60118495 - Radwell International
Fuji Electric Corp. of America
IGBT
2MBI300U4H-120-50
Specs
Transistor Type IGBT
View Details
20 V, 2 A PNP medium power transistors - BC69-25PA,115 - Nexperia B.V.
Nexperia B.V.
20 V, 2 A PNP medium power transistors
BC69-25PA,115
Specs
Package Type SOT1061 SOT1061
View Details
7 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R040M1 - AIMBG120R040M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R040M1
AIMBG120R040M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
1150A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-D1K1 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
1150A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-D1K1
Specs
Transistor Type IGBT
View Details