VBsemi Electronics Co. Ltd. Transistors CES2312-VB

Description
20V 6A 28mΩ@4.5V,6A 1 N-Channel SOT-23 MOSFETs ROHS
Description
20V 6A 28mΩ@4.5V,6A 1 N-Channel SOT-23 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - CES2312-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
CES2312-VB
Transistors CES2312-VB
20V 6A 28mΩ@4.5V,6A 1 N-Channel SOT-23 MOSFETs ROHS

20V 6A 28mΩ@4.5V,6A 1 N-Channel SOT-23 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number CES2312-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

DC - 12 GHz, 40 Watt Discrete Power GaN on SiC HEMT - TGF2955 - Qorvo
Specs
Transistor Type HEMT
Transistor Technology / Material GaN on SiC
Package Type Die
View Details
Transistor - 32458053 - Radwell International
Fuji Electric Corp. of America
View Details
TRANSISTORS - Transistors (BJT) - Single - 2SA1248S - 855022-2SA1248S - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
QUAD/DUAL SUPERCAPACITOR AUTO BALANCING (SAB™) MOSFET ARRAY - ALD810028SCLI - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC16
View Details
3 suppliers