VBsemi Electronics Co. Ltd. Transistors AUIRFR1018E-VB

Description
60V 9mΩ@10V 1.87V 1 N-Channel TO-252 MOSFETs ROHS
  • Transistors - AUIRFR1018E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
60V 9mΩ@10V 1.87V 1 N-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AUIRFR1018E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AUIRFR1018E-VB
Transistors AUIRFR1018E-VB
60V 9mΩ@10V 1.87V 1 N-Channel TO-252 MOSFETs ROHS

60V 9mΩ@10V 1.87V 1 N-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AUIRFR1018E-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1745-7-TL-E - 855058-2SA1745-7-TL-E - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2SA1745-7-TL-E
2SA1745-7-TL-E
Specs
Package Type SOT3
View Details
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Qorvo
DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor
QPD1008L
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
3 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
45 V, 100 mA PNP general-purpose transistor - 2PB709ASL/DG,215 - Nexperia B.V.
Nexperia B.V.
45 V, 100 mA PNP general-purpose transistor
2PB709ASL/DG,215
Specs
Transistor Type BJT
Polarity PNP
Package Type SOT23; SOT23
View Details