VBsemi Electronics Co. Ltd. Transistors AOI600A70-VB

Description
700V 8A 550mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS
  • Transistors - AOI600A70-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
700V 8A 550mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - AOI600A70-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
AOI600A70-VB
Transistors AOI600A70-VB
700V 8A 550mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

700V 8A 550mΩ@10V 4V 1 N-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number AOI600A70-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric - 54W0214 - Newark, An Avnet Company
Fuji Electric Corp. of America
Igbt, Module, Dual N Channel, 1.2Kv, 1.2Ka; Continuous Collector Current Fuji Electric
2MBI900VXA-120E-50
Specs
Transistor Type IGBT
Polarity N-Channel
Package Type TO-3
View Details
NPN general purpose transistor - 2PC4617QM,315 - Nexperia B.V.
Nexperia B.V.
NPN general purpose transistor
2PC4617QM,315
Specs
Transistor Type BJT
Package Type SOT883B SOT883B
View Details
7 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R020M1H - AIMDQ75R020M1H - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R020M1H
AIMDQ75R020M1H
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details
Transistor - 8220858 - Radwell International
Allen-Bradley / Rockwell Automation
Transistor
1336-QOUT-SP12B
View Details