VBsemi Electronics Co. Ltd. Transistors 2SJ637-TL-E-VB

Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - 2SJ637-TL-E-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2SJ637-TL-E-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
2SJ637-TL-E-VB
Transistors 2SJ637-TL-E-VB
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2SJ637-TL-E-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01 - 1037573-2SK2690-01 - Win Source Electronics
Fuji Electric Corp. of America
TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK2690-01
2SK2690-01
Specs
Transistor Type MOSFET
Package Type TO-3; SOT3
View Details
3 suppliers
PNP general purpose transistor - 2PB1219AS,135 - Nexperia B.V.
Nexperia B.V.
PNP general purpose transistor
2PB1219AS,135
Specs
Transistor Type BJT
Package Type SOT323; SOT323 SOT323
View Details
6 suppliers
Infineon Technologies AG
IGBT Modules
2PS06017E32G28213
Specs
Transistor Type IGBT
View Details
920A IGBT MODULE FOR ONE PHASE - SK-H1-QOUT-E920 - Allen-Bradley / Rockwell Automation
Allen-Bradley / Rockwell Automation
920A IGBT MODULE FOR ONE PHASE
SK-H1-QOUT-E920
Specs
Transistor Type IGBT
View Details