VBsemi Electronics Co. Ltd. Transistors 2SJ637-TL-E-VB

Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote
Description
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors 2SJ637-TL-E-VB
100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

100V 8.8A 250mΩ@10V 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2SJ637-TL-E-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

CSD17573Q5B CSD17573Q5B 30 V, N-Channel NexFET Power MOSFET - CSD17573Q5BT - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
7 suppliers
IGBT Module - 106024149 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD212900ASAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOIC8
View Details
4 suppliers