VBsemi Electronics Co. Ltd. Transistors 2SJ327-VB

Description
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS
Request a Quote
Description
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2SJ327-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
2SJ327-VB
Transistors 2SJ327-VB
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2SJ327-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Single IGBTs - 92-0235-ND - DigiKey
Infineon Technologies AG
Specs
Transistor Type IGBT
Package Type TO-220; TO-220-3
View Details
2 suppliers
CSD23202W10 CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET - CSD23202W10 - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity P-Channel
Package Type WLP1.0x1.0
View Details
6 suppliers