VBsemi Electronics Co. Ltd. Transistors 2SJ327-VB

Description
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS
Description
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Suppliers

Company
Product
Description
Supplier Links
Transistors - 2SJ327-VB - ODG (Origin Data Global)
Shenzhen, China
Transistors
2SJ327-VB
Transistors 2SJ327-VB
40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

40V 55A 3.75W 10mΩ@10V,30A 2.5V@250uA 1 Piece P-Channel TO-251 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 2SJ327-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

Infineon Technologies AG
Specs
Transistor Type IGBT
View Details
IGBT Module - 36313001 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
PRECISION N-CHANNEL EPAD® MOSFET ARRAY DUAL HIGH DRIVE ZERO THRESHOLD™ MATCHED PAIR - ALD212900APAL - Advanced Linear Devices, Inc.
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type PDIP8
View Details
4 suppliers
CSD16321Q5C DualCool? N-Channel NexFET? Power MOSFET - CSD16321Q5C - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6 Dual Cool
View Details
5 suppliers