VBsemi Electronics Co. Ltd. Transistors 12P10-VB

Description
100V 8.8A 250mΩ@10V,8.8A 1 Piece P-Channel TO-252 MOSFETs ROHS
  • Transistors - 12P10-VB - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
100V 8.8A 250mΩ@10V,8.8A 1 Piece P-Channel TO-252 MOSFETs ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Transistors - 12P10-VB - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Transistors
12P10-VB
Transistors 12P10-VB
100V 8.8A 250mΩ@10V,8.8A 1 Piece P-Channel TO-252 MOSFETs ROHS

100V 8.8A 250mΩ@10V,8.8A 1 Piece P-Channel TO-252 MOSFETs ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Transistors
Product Number 12P10-VB
Product Name Transistors
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 1220596 - RS Components, Ltd.
RS Components, Ltd.
MOSFETs
1220596
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type Sot-89
View Details
PMIC - PMIC - Gate Drivers - LM5111-1MY/NOPB - 124284-LM5111-1MY/NOPB - Win Source Electronics
Texas Instruments
PMIC - PMIC - Gate Drivers - LM5111-1MY/NOPB
LM5111-1MY/NOPB
Specs
Transistor Type MOSFET
Polarity N-Channel
Package Type SOT3; 8-MSOP-PowerPad
View Details
2 suppliers
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace - - JiuJiang Ingiant Technology Co., Ltd.
JiuJiang Ingiant Technology Co., Ltd.
Current Collector high-performance aviation current collector DHK160-3-90A for an aerospace
View Details
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1 - AIMBG120R010M1 - Infineon Technologies AG
Infineon Technologies AG
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMBG120R010M1
AIMBG120R010M1
Specs
Transistor Type MOSFET
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
View Details