TT Semiconductor, Inc. Matched Transistor Array TT1340F

Description
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for the NPNs), their low voltage noise of under 1 nV/Hz½, the 1300 series are ideally suited for low-noise amplifier input stages, among other applications.
Description
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for the NPNs), their low voltage noise of under 1 nV/Hz½, the 1300 series are ideally suited for low-noise amplifier input stages, among other applications.
Datasheet
Datasheet Summary
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The TT1340F is a monolithic matched transistor array containing two NPN and two PNP transistors, designed for low-noise amplifier input stages, current mirrors, and log/antilog amplifiers. It is available in a ceramic LCC package with a dielectrically isolated structure to minimize crosstalk and maximize DC isolation. The NPN transistors exhibit a typical gain-bandwidth product of 350 MHz and noise density of 0.8 nV/√Hz, while the PNP transistors show 325 MHz and 0.75 nV/√Hz. Current gain matching within the same transistor type is typically 5%. Maximum collector-emitter voltage is 36 V for both NPN and PNP devices. Operating temperature range is 0 to 70°C. The device is ESD-sensitive and not intended for life support applications.

Datasheet Summary
Powered by GS/AI

The TT1340F is a monolithic matched transistor array containing two NPN and two PNP transistors, designed for low-noise amplifier input stages, current mirrors, and log/antilog amplifiers. It is available in a ceramic LCC package with a dielectrically isolated structure to minimize crosstalk and maximize DC isolation. The NPN transistors exhibit a typical gain-bandwidth product of 350 MHz and noise density of 0.8 nV/√Hz, while the PNP transistors show 325 MHz and 0.75 nV/√Hz. Current gain matching within the same transistor type is typically 5%. Maximum collector-emitter voltage is 36 V for both NPN and PNP devices. Operating temperature range is 0 to 70°C. The device is ESD-sensitive and not intended for life support applications.

Suppliers

Company
Product
Description
Supplier Links
Matched Transistor Array - TT1340F - TT Semiconductor, Inc.
Anaheim, CA, USA
Matched Transistor Array
TT1340F
Matched Transistor Array TT1340F
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for the NPNs), their low voltage noise of under 1 nV/Hz½, the 1300 series are ideally suited for low-noise amplifier input stages, among other applications.

The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for the NPNs), their low voltage noise of under 1 nV/Hz½, the 1300 series are ideally suited for low-noise amplifier input stages, among other applications.

Supplier's Site Datasheet

Technical Specifications

  TT Semiconductor, Inc.
Product Category Bipolar RF Transistors
Product Number TT1340F
Product Name Matched Transistor Array
Transistor Grade / Operating Range Military; Mil-Processed, Extended Temperature
Package Type 14 Pin Ceramic Flatpack
Packing Method Tape Reel (optional feature); Tube (optional feature)
Number of units in IC 4
IC(max) -20 to 20 milliamps
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