The OP509B is a NPN silicon phototransistor in a lensed, clear plastic end-looking package with a 50° acceptance half-angle, designed for high sensitivity. It is mechanically and spectrally matched to OP168F and OP268F infrared emitting diodes and mounts on 0.100" (2.54 mm) hole centers. The device has a collector-emitter voltage rating of 30 V, an emitter-collector voltage of 5 V, and a power dissipation of 100 mW. Operating and storage temperatures range from -40°C to +100°C. Collector current under 1.0 mW/cm² illumination at 890 nm is 1.40 mA typ. The collector-dark current is ≤100 nA at 10 V. The device is rated for soldering temperatures up to 260°C for 5 seconds.
Photo Transistor; Leaded Process Compatible:Yes RoHS Compliant: Yes
| Newark, An Avnet Company | |
|---|---|
| Product Category | Transistors |
| Product Number | 01C3595 |
| Product Name | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
| Transistor Type | Photo Transistor; Leaded Process Compatible Tt Electronics/optek Technology |
