Transphorm, Inc. Single FETs, MOSFETs TP65H035G4WS

Description
GANFET N-CH 650V 46.5A TO247-3
Datasheet
Description
GANFET N-CH 650V 46.5A TO247-3
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TP65H035G4WS - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
TP65H035G4WS
Single FETs, MOSFETs TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3

GANFET N-CH 650V 46.5A TO247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TP65H035G4WS - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TP65H035G4WS
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TP65H035G4WS
GANFET N-CH 650V 46.5A TO247-3

GANFET N-CH 650V 46.5A TO247-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Acme Chip Technology Co., Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TP65H035G4WS TP65H035G4WS
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
Transistor Technology / Material GaNFET (Cascode Gallium Nitride FET)
V(BR)DSS 650 volts
IDSS 46500 milliamps
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