Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCP8103-H TPCP8103-H

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 108381-TPCP8103-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 840mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PS-8 (2.9x2.4)
Dimension: 8-SMD, Flat Lead
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 4.8A (Ta)
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 19nC @ 10V
Max Input Capacitance: 800pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 2.4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

MOSFET P-CH 40V 4.8A PS-8 Product overview: TPCP8103-H from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 4.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 4.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCP8103-H can be used for catalog matching and distributor lookup.