Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 TPCF8402

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 - 098955-TPCF8402 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402
098955-TPCF8402
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 098955-TPCF8402
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 098955-TPCF8402
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.2A
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 470pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 098955-TPCF8402
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402
Polarity P-Channel
V(BR)DSS 30 volts
PD 330 milliwatts
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