Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 TPCF8402

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 - 098955-TPCF8402 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402
098955-TPCF8402
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 098955-TPCF8402
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 098955-TPCF8402 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-8 (2.9x1.5) Maximum Power Dissipation: 330mW Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4A, 3.2A Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 10nC @ 10V Max Input Capacitance: 470pF @ 10V Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Limited

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 098955-TPCF8402
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-8 (2.9x1.5)
Maximum Power Dissipation: 330mW
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A, 3.2A
Gate-Source Threshold Voltage: 2V @ 1mA
Max Gate Charge: 10nC @ 10V
Max Input Capacitance: 470pF @ 10V
Maximum Rds On at Id,Vgs: 50 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
30V 4A 3.2A MOSFET Transistor
285-TPCF8402
30V 4A 3.2A MOSFET Transistor 285-TPCF8402
MOSFET N/P-CH 30V 4A/3.2A VS-8 Product overview: TPCF8402 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, 3.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8402 can be used for catalog matching and distributor lookup.

MOSFET N/P-CH 30V 4A/3.2A VS-8 Product overview: TPCF8402 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 4A, 3.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 4A, 3.2A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TPCF8402 can be used for catalog matching and distributor lookup.

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 098955-TPCF8402 285-TPCF8402
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPCF8402 30V 4A 3.2A MOSFET Transistor
Polarity P-Channel
V(BR)DSS 30 volts
PD 330 milliwatts 330 milliwatts
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