Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8113 TPC8113

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056792-TPC8113 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP (5.5x6.0) Dimension: 8-SOIC (0.173", 4.40mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 11A (Ta) Gate-Source Threshold Voltage: 2V @ 1mA Max Gate Charge: 107nC @ 10V Max Input Capacitance: 4500pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 5.5A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited