Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8067-H TPC8067-H

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056784-TPC8067-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.3V @ 100μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056784-TPC8067-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.3V @ 100μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8067-H - 056784-TPC8067-H - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8067-H
056784-TPC8067-H
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8067-H 056784-TPC8067-H
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056784-TPC8067-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: 8-SOP Dimension: 8-SOIC (0.154", 3.90mm Width) Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 9A (Ta) Gate-Source Threshold Voltage: 2.3V @ 100μA Max Gate Charge: 9.5nC @ 10V Max Input Capacitance: 690pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056784-TPC8067-H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-SOP
Dimension: 8-SOIC (0.154", 3.90mm Width)
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 9A (Ta)
Gate-Source Threshold Voltage: 2.3V @ 100μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 690pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056784-TPC8067-H
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC8067-H
Polarity N-Channel; N-Channel
V(BR)DSS 30 volts
PD 1000 milliwatts
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