N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Applications
N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
N-Channel 55V 210mA (Ta) 302mW (Ta) Surface Mount TO-236AB
BSH111BK - 55 V, N-channel Trench MOSFET TO-236 3-Pin Product overview: BSH111BKR from Nexperia is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 55 V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55 V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-BSH111BKR can be used for catalog matching and distributor lookup.
Manufacturer: Nexperia USA Inc.
Win Source Part Number: 1024373-BSH111BKR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 302mW (Ta)
Family Name: BSH111BK
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-236AB (SOT23)
Dimension: TO-236-3, SC-59, SOT-23-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 210mA (Ta)
Gate-Source Threshold Voltage: 1.3V @ 250μA
Max Gate Charge: 0.5nC @ 4.5V
Max Input Capacitance: 30pF @ 30V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 4 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): 2N7002-L99Z; 2N7002-S00Z ; 2N7002-D87Z; BSS138LT3G;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET 55V N-channel Trench MOSFET
MOSFET 55V N-channel Trench MOSFET
MOSFET N-CH 55V 210MA TO236AB
55V 210mA 302mW 4Ω@4.5V,200mA 1.3V@250uA N Channel SOT-23 MOSFETs ROHS
MOSFET N-CH 55V 210MA TO236AB
MOSFET, N-CH, 55V, 0.21A, SOT-23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:55V; On Resistance Rds(on):2.3ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
| Nexperia B.V. | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Utmel Electronic Limited | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | BSH111BKR | 1727-2340-2-ND | 278-BSH111BKR | 1024373-BSH111BKR | 554-BSH111BKR | BSH111BKR | BSH111BKR | BSH111BKR | BSH111BKR | 84Y9812 |
| Product Name | 55 V, N-channel Trench MOSFET | Single FETs, MOSFETs | N-Channel 55 V MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSH111BKR | MOSFET 55V N-channel Trench MOSFET | MOSFET | Single FETs, MOSFETs | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 55V, 0.21A, Sot-23-3; Transistor Polarity Nexperia |
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| V(BR)DSS | 55 volts | 55 volts | 55 volts | 55 volts | 55 volts | |||||
| IDSS | 210000 milliamps | 210 milliamps | 210 milliamps | |||||||
| VGS(off) | 10 volts | 1.3 volts | ||||||||
| PD | 302 milliwatts | 302 milliwatts | 302 milliwatts | 302 milliwatts | 302 milliwatts |
