Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6110 TPC6110

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056762-TPC6110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 100μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056762-TPC6110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 100μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6110 - 056762-TPC6110 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6110
056762-TPC6110
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6110 056762-TPC6110
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 056762-TPC6110 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 4.5A (Ta) Gate-Source Threshold Voltage: 2V @ 100μA Max Gate Charge: 14nC @ 10V Max Input Capacitance: 510pF @ 10V Maximum Rds On at Id,Vgs: 56 mOhm @ 2.2A, 10V Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Sufficient

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 056762-TPC6110
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 700mW (Ta)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: VS-6 (2.9x2.8)
Dimension: SOT-23-6 Thin, TSOT-23-6
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4.5A (Ta)
Gate-Source Threshold Voltage: 2V @ 100μA
Max Gate Charge: 14nC @ 10V
Max Input Capacitance: 510pF @ 10V
Maximum Rds On at Id,Vgs: 56 mOhm @ 2.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 056762-TPC6110
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6110
Polarity P-Channel; P-Channel
V(BR)DSS 30 volts
PD 700 milliwatts
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