Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TPC6109-H TPC6109-H

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 101467-TPC6109-H Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 700mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: VS-6 (2.9x2.8) Dimension: SOT-23-6 Thin, TSOT-23-6 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 5A (Ta) Gate-Source Threshold Voltage: 1.2V @ 200μA Max Gate Charge: 12.3nC @ 10V Max Input Capacitance: 490pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 59 mOhm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance