The TLP785 is a photocoupler consisting of an infrared emitting diode optically coupled to a silicon phototransistor in a four-lead plastic DIP4 package with a 7.62 mm pitch. It provides an isolation voltage of 5000 Vrms (min), a collector-emitter voltage of 80 V (min), and a current transfer ratio of 50% (min), with a rank GB variant offering 100% (min). The device meets UL 1577, cUL, VDE EN 60747-5-5 (with option D4), CQC GB4943.1 and GB8898, and SEMKO EN 62368-1 standards. It has a creepage distance of 7.0 mm (min), clearance of 7.0 mm (min), and insulation thickness of 0.4 mm (min). Operating temperature range is -55 °C to 110 °C. Weight is 0.25 g (typ.).
X36 PB-F TRANSISTOR OPTOCOUPLER Product overview: TLP785 from Toshiba Electronic Devices and Storage Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Transistor, Photovoltaic Output Optoisolators. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 903-TLP785 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 903-TLP785 |
| Product Name | Bipolar Transistor |
| Package Type | Bulk |
