Toshiba Imaging Systems Division TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK72E08N1 TK72E08N1

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212920-TK72E08N1 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 192W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 80V Continuous Drain Current at 25°C: 72A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 81nC @ 10V Max Input Capacitance: 5500pF @ 40V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.3 mOhm @ 36A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance