Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK6A65D TK6A65D

Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212916-TK6A65D Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 45W (Tc) Family Name: TK6A65D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220SIS Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 6A (Ta) Gate-Source Threshold Voltage: 4V @ 1mA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 1050pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.11 Ohm @ 3A, 10V Alternative Parts (Cross-Reference): FQPF6N70; R6006JNX; AOTF9N70; AOTF9N70L; Introduction Date: April 09, 2009 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance