Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q) TK50J60U(Q)

Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007998-TK50J60U(Q) Packaging: Bulk Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 4.05 nF Power Dissipation: 400 W Number of Pins: 3 Rise Time: 90 ns Fall Time: 17 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IPW60R070P6XKSA1; STW55NM60ND; STY60NM60; STW56N60M2-4; FCH47N60N; FCH47N60NF; Popularity: Low Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 400 W Continuous Drain Current (ID): 50 A Gate to Source Voltage (Vgs): 30 V Rds On Max: 65 mΩ
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Description
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007998-TK50J60U(Q) Packaging: Bulk Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 4.05 nF Power Dissipation: 400 W Number of Pins: 3 Rise Time: 90 ns Fall Time: 17 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IPW60R070P6XKSA1; STW55NM60ND; STY60NM60; STW56N60M2-4; FCH47N60N; FCH47N60NF; Popularity: Low Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 400 W Continuous Drain Current (ID): 50 A Gate to Source Voltage (Vgs): 30 V Rds On Max: 65 mΩ
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q) - 1007998-TK50J60U(Q) - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q)
1007998-TK50J60U(Q)
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q) 1007998-TK50J60U(Q)
Manufacturer: Toshiba Semiconductor and Storage Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1007998-TK50J60U(Q) Packaging: Bulk Drain to Source Voltage (Vdss): 600 V Number of Elements: 1 Input Capacitance: 4.05 nF Power Dissipation: 400 W Number of Pins: 3 Rise Time: 90 ns Fall Time: 17 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IPW60R070P6XKSA1; STW55NM60ND; STY60NM60; STW56N60M2-4; FCH47N60N; FCH47N60NF; Popularity: Low Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Max Power Dissipation: 400 W Continuous Drain Current (ID): 50 A Gate to Source Voltage (Vgs): 30 V Rds On Max: 65 mΩ

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1007998-TK50J60U(Q)
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Number of Elements: 1
Input Capacitance: 4.05 nF
Power Dissipation: 400 W
Number of Pins: 3
Rise Time: 90 ns
Fall Time: 17 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IPW60R070P6XKSA1; STW55NM60ND; STY60NM60; STW56N60M2-4; FCH47N60N; FCH47N60NF;
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 400 W
Continuous Drain Current (ID): 50 A
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 65 mΩ

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Sheung Wan, Hong Kong
MOSFET N-Ch MOS 50A 600V 400W 4050pF 0.065

MOSFET N-Ch MOS 50A 600V 400W 4050pF 0.065

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Technical Specifications

  Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1007998-TK50J60U(Q) TK50J60U(Q)
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q) MOSFET
PD 400000 milliwatts
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