Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1007998-TK50J60U(Q)
Packaging: Bulk
Drain to Source Voltage (Vdss): 600 V
Number of Elements: 1
Input Capacitance: 4.05 nF
Power Dissipation: 400 W
Number of Pins: 3
Rise Time: 90 ns
Fall Time: 17 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IPW60R070P6XKSA1; STW55NM60ND; STY60NM60; STW56N60M2-4; FCH47N60N; FCH47N60NF;
Popularity: Low
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Max Power Dissipation: 400 W
Continuous Drain Current (ID): 50 A
Gate to Source Voltage (Vgs): 30 V
Rds On Max: 65 mΩ
MOSFET N-Ch MOS 50A 600V 400W 4050pF 0.065
| Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1007998-TK50J60U(Q) | TK50J60U(Q) |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK50J60U(Q) | MOSFET |
| PD | 400000 milliwatts |