Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK4P60DB(T6RDV,Q,S) TK4P60DB(T6RDV,Q,S)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1099459-TK4P60DB(T6RDV,Q,S)
Mounting: SMD (SMT)
Number of Elements: 1
Power Dissipation: 80 W
Number of Pins: 3
Rise Time: 18 ns
Fall Time: 8 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: DPAK
Alternative Parts (Cross-Reference): TK4P60DB(T6RDV,Q,S)TK4P60DB(T6RDV,Q,S;
Popularity: Low
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Surface Mount
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Continuous Drain Current (ID): 3.7 A
Gate to Source Voltage (Vgs): 30 V

Field Effect Transistor Silicon N Channel MOS Type Product overview: TK4P60DB(T6RDV,Q,S) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK4P60DB(T6RDV,Q,S) can be used for catalog matching and distributor lookup.