MOSFET N-CH 80V 80A TO-220 Product overview: TK46E08N1 from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 80A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 80A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK46E08N1 can be used for catalog matching and distributor lookup.
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212891-TK46E08N1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 103W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 500μA
Max Gate Charge: 37nC @ 10V
Max Input Capacitance: 2500pF @ 40V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 23A, 10V
Alternative Parts (Cross-Reference): AOT288L; STP140NF75; IXTP88N085T; TK46E08N1;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-TK46E08N1 | 212891-TK46E08N1 |
| Product Name | 80V 80A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK46E08N1 |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 103000 milliwatts | 103000 milliwatts |
| TJ | 150 C (302 F) | 150 C (302 F) |