Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK3A60DA(Q,M) TK3A60DA(Q,M)

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 125297-TK3A60DA(Q,M)
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2.5A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 9nC @ 10V
Max Input Capacitance: 380pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.8 Ohm @ 1.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

MOSFET N-CH 600V 2.5A TO220SIS Product overview: TK3A60DA(Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK3A60DA(Q,M) can be used for catalog matching and distributor lookup.

N-Channel 600V 2.5A (Ta) 30W (Tc) Through Hole TO-220SIS