MOSFET N-CH 100V 33A DPAK Product overview: TK33S10N1Z,LQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 33A, DPAK. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 33A, DPAK, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK33S10N1Z,LQ can be used for catalog matching and distributor lookup.
N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+
N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+
N-Channel 100V 33A (Ta) 125W (Tc) Surface Mount DPAK+
Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 112418-TK33S10N1Z,LQ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: DPAK+
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 33A (Ta)
Gate-Source Threshold Voltage: 4V @ 500μA
Max Gate Charge: 28nC @ 10V
Max Input Capacitance: 2050pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.7 mOhm @ 16.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
MOSFET N-CH 100V 33A DPAK
MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK
MOSFET N-CH 100V 33A DPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-TK33S10N1Z,LQ | TK33S10N1ZLQCT-ND | 112418-TK33S10N1Z,LQ | TK33S10N1Z,LQ | 4669-TK33S10N1Z,LQ | TK33S10N1Z,LQ |
| Product Name | 100V 33A DPAK MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK33S10N1Z,LQ | Single FETs, MOSFETs | MOSFET UMOSVIII 100V 10m max(VGS=10V) DPAK | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | 100 volts | ||
| PD | 125 milliwatts | 125000 milliwatts | 125000 milliwatts | 125000 milliwatts | ||
| TJ | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) | 175 C (347 F) |
