Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK31E60W TK31E60W

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212877-TK31E60W
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Super Junction
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 30.8A (Ta)
Gate-Source Threshold Voltage: 3.7V @ 1.5mA
Max Gate Charge: 86nC @ 10V
Max Input Capacitance: 3000pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 88 mOhm @ 15.4A, 10V
Alternative Parts (Cross-Reference): STP40N60M2; IPP60R165CPAKSA1; IPP65R110CFDAXK;
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

MOSFET N CH 600V 30.8A TO-220 Product overview: TK31E60W from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30.8A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 30.8A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK31E60W can be used for catalog matching and distributor lookup.