Toshiba America Electronic Components, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK2P60D TK2P60D

Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212873-TK2P60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Family Name: TK2P60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STD1HNC60; RJK6032DPD-00#J2 ; TSM2N60CP R0; TSM2N60CP RO; Introduction Date: April 06, 2010 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212873-TK2P60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Family Name: TK2P60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STD1HNC60; RJK6032DPD-00#J2 ; TSM2N60CP R0; TSM2N60CP RO; Introduction Date: April 06, 2010 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK2P60D - 212873-TK2P60D - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK2P60D
212873-TK2P60D
TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK2P60D 212873-TK2P60D
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 212873-TK2P60D Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 60W (Tc) Family Name: TK2P60D Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: PW-MOLD Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Ta) Gate-Source Threshold Voltage: 4.4V @ 1mA Max Gate Charge: 7nC @ 10V Max Input Capacitance: 280pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1A, 10V Alternative Parts (Cross-Reference): STD1HNC60; RJK6032DPD-00#J2 ; TSM2N60CP R0; TSM2N60CP RO; Introduction Date: April 06, 2010 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 212873-TK2P60D
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 60W (Tc)
Family Name: TK2P60D
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PW-MOLD
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Ta)
Gate-Source Threshold Voltage: 4.4V @ 1mA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 280pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.3 Ohm @ 1A, 10V
Alternative Parts (Cross-Reference): STD1HNC60; RJK6032DPD-00#J2 ; TSM2N60CP R0; TSM2N60CP RO;
Introduction Date: April 06, 2010
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212873-TK2P60D
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK2P60D
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 60000 milliwatts
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