Toshiba Electronics (UK) Ltd Single FETs, MOSFETs TK2A65D(STA4,Q,M)

Description
N-Channel 650V 2A (Ta) 30W (Tc) Through Hole TO-220SIS
Request a Quote Datasheet
Description
N-Channel 650V 2A (Ta) 30W (Tc) Through Hole TO-220SIS
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - TK2A65D(STA4QM)-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
TK2A65D(STA4QM)-ND
Single FETs, MOSFETs TK2A65D(STA4QM)-ND
N-Channel 650V 2A (Ta) 30W (Tc) Through Hole TO-220SIS

N-Channel 650V 2A (Ta) 30W (Tc) Through Hole TO-220SIS

Buy Now Datasheet
Singapore
650V 2A MOSFET Transistor
278-TK2A65D(STA4,Q,M)
650V 2A MOSFET Transistor 278-TK2A65D(STA4,Q,M)
MOSFET N-CH 650V 2A TO220SIS Product overview: TK2A65D(STA4,Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK2A65D(STA4,Q,M ) can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 2A TO220SIS Product overview: TK2A65D(STA4,Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK2A65D(STA4,Q,M) can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325319-TK2A65D(STA4,Q,M) - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325319-TK2A65D(STA4,Q,M)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325319-TK2A65D(STA4,Q,M)
Manufacturer: Toshiba Semiconductor and Storage Win Source Part Number: 1325319-TK2A65D(STA4 ,Q,M) Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 2A Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V Vgs(th) (Max) @ Id: 4.4V @ 1mA Power Dissipation (Max): 30W (Tc) Supplier Device Package: TO-220SIS Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Full Pack ECCN: EAR99 Fake Threat In the Open Market: 83 MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Other Part Number: TK2A65DSTA4QM,TK2A65 D(STA4QM) Base Product Number: TK2A65 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: ROHS3 Compliant

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1325319-TK2A65D(STA4,Q,M)
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 2A
Rds On (Max) @ Id, Vgs: 3.26Ohm @ 1A, 10V
Vgs(th) (Max) @ Id: 4.4V @ 1mA
Power Dissipation (Max): 30W (Tc)
Supplier Device Package: TO-220SIS
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 83
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Other Part Number: TK2A65DSTA4QM,TK2A65D(STA4QM)
Base Product Number: TK2A65
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - TK2A65D(STA4,Q,M) - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
TK2A65D(STA4,Q,M)
Discrete Semiconductor Products - Transistors - FETs, MOSFETs TK2A65D(STA4,Q,M)
MOSFET N-CH 650V 2A TO220SIS

MOSFET N-CH 650V 2A TO220SIS

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number TK2A65D(STA4QM)-ND 278-TK2A65D(STA4,Q,M) 1325319-TK2A65D(STA4,Q,M) TK2A65D(STA4,Q,M)
Product Name Single FETs, MOSFETs 650V 2A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel
Package Type TO-220; TO-220-3 Full Pack Tube TO-220; SOT3; TO-220-3 Full Pack TO-220; TO-220-3 Full Pack
MOSFET Operating Mode Enhancement
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors - FETs, MOSFETs - RF - AUIRFR2307Z - 1020748-AUIRFR2307Z - Win Source Electronics
Specs
Polarity N-Channel; N-Channel
V(BR)DSS 75 volts
PD 110000 milliwatts
View Details
5 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC2682-AZ - 855146-2SC2682-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor - QPD1029L - Qorvo
Specs
Transistor Technology / Material 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
Transistor Grade / Operating Range Military
Package Type NI-1230 (Eared)
View Details
2 suppliers