Toshiba Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK18A50D(Q,M) TK18A50D(Q,M)

Manufacturer: Toshiba Semiconductor and Storage
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1007883-TK18A50D(Q,M)
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 500 V
Number of Elements: 1
Power Dissipation: 50 W
Number of Pins: 3
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SC
Alternative Parts (Cross-Reference): FQAF9N50; FQAF34N25; FQAF16N50; IRFS450B; FQAF19N20; FQAF16N25TK18A50D(QM);
Popularity: Low
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Mount: Through Hole
RoHS: Compliant
Min Operating Temperature: -55 °C
REACH SVHC: No SVHC
Max Power Dissipation: 50 W
Continuous Drain Current (ID): 18 A
Drain to Source Resistance: 230 mΩ
Gate to Source Voltage (Vgs): 30 V
Threshold Voltage: 2 V

Trans MOSFET N-CH Si 500V 18A 3-Pin(3+Tab) TO-220SIS Product overview: TK18A50D(Q,M) from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 18A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-TK18A50D(Q,M) can be used for catalog matching and distributor lookup.