Toshiba Electronics (UK) Ltd 650V 13.7A MOSFET Transistor TK14G65W5,RQ

MOSFET N-CH 650V 13.7A D2PAK Product overview: TK14G65W5,RQ from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 13.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 13.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK14G65W5,RQ can be used for catalog matching and distributor lookup.

N-Channel 650V 13.7A (Ta) 130W (Tc) Surface Mount D2PAK

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1107410-TK14G65W5,RQ
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 130W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: D2PAK
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 13.7A (Ta)
Gate-Source Threshold Voltage: 4.5V @ 690μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1300pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 300 mOhm @ 6.9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance