Toshiba Electronics (UK) Ltd TRANSISTORS - Transistors - FETs, MOSFETs - RF - TK11A65W,S5X TK11A65W,S5X

Manufacturer: Toshiba Semiconductor and Storage
Win Source Part Number: 1050201-TK11A65W,S5X
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220SIS
Dimension: TO-220-3 Full Pack, Isolated Tab
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11.1A (Ta)
Gate-Source Threshold Voltage: 3.5V @ 450μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 890pF @ 300V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 390 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

MOSFET N-CH 650V 11.1A TO220SIS Product overview: TK11A65W,S5X from Toshiba Electronic Devices and Storage Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-TK11A65W,S5X can be used for catalog matching and distributor lookup.

N-Channel 650V 11.1A (Ta) 35W (Tc) Through Hole TO-220SIS